As a remedy for light-induced degradation (LID) in crystalline silicon cells, gallium-doped wafers are showing considerable promise. With reports that ingot growth productivity can rival that of boron doping, it seems that gallium doping may now be able to meet the cost, integration and performance criteria that have informed solar manufacturing technology adoption, writes Alex Barrows, senior research analyst at U.K.-based consultancy Exawatt.
While boron doping is the mainstreaming technology for crystalline silicone cell production, gallium-doped wafers are showing promise due to LID resistence.
Image: Longi
Stay informed
pv magazine is the leading trade media platform covering the global solar photovoltaics industry. Log in or purchase a digital or print version of this issue to read this article in full.
The cookie settings on this website are set to "allow cookies" to give you the best browsing experience possible. If you continue to use this website without changing your cookie settings or you click "Accept" below then you are consenting to this.
